SI1300DL ,N-Channel 20-V (D-S) MOSFETS-01883—Rev. A, 28-Aug-00 1YYSi1300DLNew ProductVishay Siliconix
SI1300DL
N-Channel 20-V (D-S) MOSFET
Si1300DL
VISHAY
New Product Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (mA)
20 2.0 @ sz = 4.5 v 250
2.5@VGS= 25v 150
SOT-323
SC-7O (3-Leads)
Marking Code
Lot Traceability
and Date Code
s E Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VCs ck 8
TA = 25°C 250
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 200 mA
Pulsed Drain Current IDM 500
TA = 25°C 0.15
Maximum Power Dissipation" PD W
TA = 70°C 0.10
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-tco-Ambienta RthJA 833 °C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
Document Number: 71301 www.vishay.com
S-01883-Rev. A, 28-Aug-00 1
Si1300DL VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 10 MA 20 24 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 50 11A 0.4 os 1.5
Gate-Body Leakage IGSS VDS = 0 V, VGs = i 8 V l 2 l 100 A
VDS = 20 V, VGS = O V 0.001 100
Zero Gate Voltage Drain Current IDSS
VDS=20V,VGS=0V,TJ=55°C 5 HA
VDS = 5.0 V, VGS = 2.5 V 120 160
On-State Drain Currents 'D(on) mA
Vos = 8.0 V, VGS = 4.5 V 400 800
. . VGS=2.5 V, II): 150 mA 1.6 2.5
Drain-Source On-State Resistancea rDS(0n) Q
VGS = 4.5 V, ID = 250 mA 1.2 2.0
Forward Transconductancea gfs VDs = 2.5 V, ID = 50 mA 200 mS
Diode Forward Voltage" VSD ls = 50 mA, VGS = 0 V 0.7 1.2 V
Dynamic
Total Gate Charge Qg 350 450
Gate-Source Charge Qgs Vos = 5.0 V, vss = 4.5 V, ID = 100 mA 25 PC
Gate-Drain Charge di 100
Input Capacitance Ciss 20
Output Capacitance Coss Vos = 5.0 V, VGS = 0 V, f= 1 MHz 14 pF
Reverse Transfer Capacitance Crss 5
Switching', C
Turn-On Delay Time g(on, 7 12
Rise Time tr VDD = 3.0 V, RL = 100 Q 25 35 ns
Turn-Off Delay Time tam) ID = 0.25 A, VGEN = 4.5 V, Rs = 10 Q 19 30
Fall Time tt 9 15
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 71301
S-01883-Rev. A, 28-Aug-00
VISHAY
Si1300DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
rDS(on) — On—Resistance ( Q)
Output Characteristics
VGS = 3.5 thru 5 V 'r'''.
C,.,,-'"''''"" 3V
1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1 2 3 4
b - Drain Current (A)
Gate Charge
VDS=6V /
- ID=100 mA
o,,,,w'''''"
100 200 300 400 500 600
Qg - Total Gate Charge (pC)
roam) — On-Resistance (Q)
| D — Drain Current
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = -55''C
0.6 l V
0.4 jf
0 0.5 1.0 1.5 2.0 2.5 3.0
N/ss - Gate-to-Source Voltage (V)
Capacitance
20 t Ciss
( Coss
10 -'m-..
a.--..-,
Iss,., Crss
m-..-,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1 1 l "
VGs=4.5V vp'''
- Iro=100 mA
1.4 //''"
-50 -25 O 25 50 75 100 125 150
T: - Junction Temperature (°C)
Document Number: 71301
S-01883-Rev. A, 28-Aug-00
www.vishay.com
Si1300DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1 T - 125°C
if 0.1 8
y .2 ID = 250 mA
, 0.01 I
0.001 O
0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2 l l
0.1 "ss, ID = 50 [IA
3 -0.0
'ir,-,, -0 1 'N.
iii" 0 2
-02 'Ns,
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
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Document Number: 71301
4 S-01883-Rev. A, 28-Aug-00
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