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SI1026X
N-Channel 60-V (D-S) MOSFET
VISHAY
Si1026X
New Product Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
TrenchFET
MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) (C2) VGS(th) (V) ID (mA)
60 1.40@Vss=10V Ito 2.5 500
FEATURES BENEFITS
Low On-Resistance: 1.40 Q
Low Threshold: 2 V (typ)
Low Input Capacitance: 30 pF
Fast Switching Speed: 15 ns (typ)
Low Input and Output Leakage
Miniature Package
. Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
Top View
ESD Protected
2000 If
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
q Battery Operated Systems
q Solid-State Relays
Marking Code: E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V03 60
Gate-Source Voltage VGS $20
TA = 25°C 320 305
Continuous Drain Current (TJ = 150"C)a ID
TA = 85°C 230 220
Pulsed Drain Currentb IBM -650
Continuous Source Current (diode conduction)a Is 450 380
TA = 25°C 280 250
Maximum Power Dissipation" Pro mW
TA = 85°C 145 130
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximumjunction temperature.
Document Number: 71434
S-03518-Rev. A, 23-Apr-01
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Si1026X
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 IA 60
Gate-Threshold Voltage Vesah) VDS = VGS, ID = 0.25 mA 1 2.5
N/rys=0V,VGs--ce10V i150
Gate-Body Leakage less
VDs=0V,Vss=:e5V 1:50 A
VDs=50V,VGs=0V 10
Zero Gate Voltage Drain Current IDSS
T J = 85''C 100
Vos = 10 V, VGS = 4.5 V 500
On-State Drain Current3 loan) mA
VDS=7-5 V,VGs= 10V 800
VGS = 4.5 V, ID = 200 mA 3.0
Drain-Source On-Resistancea rros(on) N/ss = 10 V, ID = 500 mA 1.40 Q
T J = 125°C 2.50
Forward Transconductancea gfs Vos = 10 V, ID = 200 mA 200 mS
Diode Forward Voltagea VSD VGS = 0 V, Is = 200 mA 1.40 V
Dynamicb
Total Gate Charge Qg 600
_ VDS =10V, ID: 250 mA
Gate Source Charge Qgs VGS = 4.5 V 120 PC
Gate-Drain Charge di 225
Input Capacitance Ciss 3O
. V = 25 V, V = 0 V
Output Capacitance Coss DS f-- 1 M325 6 pF
Reverse Transfer Capacitance Crss 3
Switching”, C
Turn-On Time t(on) VDD = 30 V, RL = 150 Q 15
ID = 200 mA, VGEN = 10 V ns
Turn-Off/e t(om Rs = 10 Q 20
a. Pulse test: PW s300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature,
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Document Number: 71434
S-03518-Rev. A, 23-Apr-01
VISHAY
Si1026X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
l l 2 'ev
0.8 VGS=1Othru7V /Y''''''' 5V
z,,,,,,))'!,',':"',';", s-'""""
0.6 tfl",,-'''''''''"
0.2 '''
| D — Drain Current (A)
I D — Drain Current (mA)
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
2.0 _ VGS=4.5V j
VGS= 10V
C — Capacitance (pF)
rDS(on) — On-Resistance( $2)
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
s_vDs=1ov /
ID = 250 mA ',,,P"
V GS — Gate-to-Source Voltage (V)
rDS(on) — On—Resistance( £2)
(Normalized)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
09 - Total Gate Charge (nC)
Transfer Characteristics
T J = -55c'C
Ns 25°C
0 1 2 3 4 5 6
Was - Gate-to-Source Voltage (V)
Capacitance
VGS = O V
f= 1 MHz
ts,,.,..,.. Ciss
l Coss
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l l l l
VGS =10V@ 500 mA
1.6 I /
1.2 - Vss=4.5V -
/ @ 200 mA
0.8 //
-50 -25 0
25 50 75
100 125 150
T J - Junction Temperature (°C)
Document Number: 71434
S-03518-Rev. A, 23-Apr-01
www.vishay.com
- C=7'"
Si1026X VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
1000 5
VGS = 0 V
Ci.:] 100 Cl
tij, 8 3
'r, T J = 125°C fsi,
o r': 2 ID = 500 mA
I 10 "s, T J = 25°C I
f' "ic," ID = 200 mA
T J = -55''C F?
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
V39 - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
"ss ID = 250 0A
VGS(th)Variance (V)
-50 -25 0 25 5O 75 100 125 150
To - Junction Temperature CC)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ii' o Duty Cycle = 0.5
uh', ' 0.2
ti, F, Notes:
RD g 0.1 -T-
g l? PDM
tis" I
= t1 _
2 _‘L_ ta t
1. Duty Cycle, D = T;
2. Per Unit Base = RmJA = 5000ClW
. 3. TJM - TA = PoMirtruA(t)
Single Pulse 4. Surface Mounted
IO-A 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71434
4 S-03518-Rev. A, 23-Apr-01
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