SGP20N60HS ,IGBTs & DuoPacksapplications offers:P-TO-220-3-1 P-TO-247-3-1- parallel switching capability(TO-220AB) (TO-247AC)- ..
SGP23N60UFD ,Ultra-Fast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGP23N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGP23N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGP40N60UF ,Ultra-Fast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGP5N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SIL06C-05SADJ-VJ , DC-DC CONVERTERS C Class Non-isolated
SIL104-220 , SMT Power Inductor
SIL104R-1R5 , SMT Power Inductor
SIL104R-2R5 , SMT Power Inductor
SIL104R-3R8 , SMT Power Inductor
SIL104R-5R2 , SMT Power Inductor
SGP20N60HS-SGW20N60HS
IGBTs & DuoPacks
SGP20N60HS
SGW20N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:- parallel switching capability
- moderate Eoff increase with temperature- very tight parameter distributionHigh ruggedness, temperature stable behaviourComplete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratingsμs
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
SGP20N60HS
SGW20N60HS
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static CharacteristicTransconductance
Dynamic Characteristic
SGP20N60HS
SGW20N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT CharacteristicTurn-on delay time
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V,IC=20A,
VGE=0/15V,RG= 16Ω1)=60nH,1)=40pFEnergy losses include
“tail” and diode
SGP20N60HS
SGW20N60HS
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
COLLE
OR CURRE10V100V1000V
0,1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1.Collector current as a function ofswitching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2.Safe operating area(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
ISS0W
20W
40W
60W
80W
100W
120W
140W
160W
180W
COLLE
OR CURRE
25°C75°C
10A
20A
30A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3.Power dissipation as a function of
case temperature(Tj ≤ 150°C)
Figure 4.Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGP20N60HS
SGW20N60HS
COLLE
OR CURRE
10A
20A
30A
50A
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5.Typical output characteristic(Tj = 25°C)
Figure 6.Typical output characteristic(Tj = 150°C)
COLLE
OR CURRE0A
20A
40A
at),
COLLE
CTOR
ITT SAT
VO
-50°C0°C50°C100°C150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
VGE, GATE-EMITTER VOLTAGETJ, JUNCTION TEMPERATURE
Figure 7.Typical transfer characteristic(VCE=10V)
Figure 8.Typical collector-emitter
saturation voltage as a function ofjunction temperature(VGE = 15V)
SGP20N60HS
SGW20N60HS
t,
ITC
TI10A20A30A1ns
10ns
100ns
t,
ITC
TI10Ω20Ω30Ω40Ω1 ns
10 ns
100 ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9.Typical switching times as afunction of collector current(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, RG=16Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as afunction of gate resistor(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, IC=20A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
D VO
-50°C0°C50°C100°C150°C1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
TJ, JUNCTION TEMPERATURETJ, JUNCTION TEMPERATURE
Figure 11.Typical switching times as a
function of junction temperature(inductive load, VCE=400V,
VGE=0/15V, IC=20A, RG=16Ω,Dynamic test circuit in Figure E)
Figure 12.Gate-emitter threshold voltage as
a function of junction temperature(IC = 0.5mA)
