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Partno	Mfg	Dc	Qty	Available	Descript
SGW20N60	INFINEON	N/a	240	avai	Short Circuit Rated IGBT

SGW20N60 ,Short Circuit Rated IGBTapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SGW20N60HS ,IGBTs & DuoPacksDynamic CharacteristicInput capacitance C V =25V, - 1100 pFiss CEV =0V,Output capacitance C - 105os ..
SGW20N60RUF ,Short Circuit Rated IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls.C CCG G ..
SGW23N60UFD ,Ultra-Fast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGW23N60UFDTM ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGW30N60 ,IGBTs & DuoPacksDynamic CharacteristicInput capacitance C V =25V, - 1600 1920 pFiss CEV =0V,Output capacitance C - ..
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SGW20N60
IGBTs & DuoPacks
SGP20N60,SGB20N60
SGW20N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
SGP20N60,SGB20N60
SGW20N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
Input capacitance
Reverse transfer capacitance
SGP20N60,SGB20N60
SGW20N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Turn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V,IC=20A,
VGE=0/15V,
RG=16Ω,1)=180nH,1)=900pFEnergy losses include
“tail” and diode
SGP20N60,SGB20N60
SGW20N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
110A
COLLE
OR CURRE10V100V1000V
0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
160W
180W
200W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
20A
30A
40A
50A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
SGP20N60,SGB20N60
SGW20N60
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
60A
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
60A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
10A
20A
30A
40A
50A
60A
70A
CE(sat)
COLLE
ITT
SATU
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature(VGE = 15V)
SGP20N60,SGB20N60
SGW20N60
ITC
TI
10A20A30A40A10ns
100ns
ITC
TI10Ω20Ω30Ω40Ω50Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 20A,Dynamic test circuit in Figure E)
t,
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
VO
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.7mA)

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