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SGW13N60UFDTM
Discrete, High Performance IGBT with Diode
SGW13N60UFD IGBT SGW13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.1 V @ I = 6.5A CE(sat) C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : t = 37ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C C G G D2-PAK G E E E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGW13N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C13 A C I C Collector Current @ T = 100°C6.5 A C I Pulsed Collector Current 52 A CM (1) I Diode Continuous Forward Current @ T = 100°C8 A F C I Diode Maximum Forward Current 56 A FM P Maximum Power Dissipation @ T = 25°C60 W D C Maximum Power Dissipation @ T = 100°C25 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 2.0 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 3.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient (PCB Mount) -- 40 °C/W θJA (2) Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2002 SGW13N60UFD Rev. A1
