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SGSIF344STN/a34avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
SGSIF444STN/a30avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS


SGSIF344 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSGSIF344 SGSIF444VCES Collector-Emitter Voltage ..
SGSIF444 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSAPPLICATIONS:n SWITCH MODE POWER SUPPLIESn HORIZONTAL DEFLECTION FOR COLOUR 3322TVS AND MONITORS1 1 ..
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SGSIF344-SGSIF444
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
SGSIF344
SGSIF444

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS SGSIF344IS SGS-THOMSON PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOUR
TVS AND MONITORS
DESCRIPTION

The SGSIF344 and SGSIF444 are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and usesa
Hollow Emitter structure to enhance switching
speeds.
These transistors are availablein ISOWATT220
and ISOWATT218 plastic package respectively.
The SGSF seriesis designed for high speed
switching applications such as power supplies
and horizontal deflection circuitsin TVs and
monitors.
INTERNAL SCHEMATIC DIAGRAM

June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
SGSIF344 SGSIF444

VCES Collector-Emitter Voltage (VBE=0) 1200 V
VCEO Collector-Emitter Voltage(IB=0) 600 V
VEBO Emitter-Base Voltage(IC =0) 7 V Collector Current 7 A
ICM Collector Peak Current(tp <5 ms) 12 A Base Current 5 A
IBM Base Peak Current(tp <5 ms) 8 A
Ptot Total DissipationatTc =25o C40 50 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
ISOWATT220 ISOWATT218
2
1/7
THERMAL DATA
ISOWATT220 ISOWATT218
o C/W
Rthj-case Thermal Resistance Junction-case Max 3.12 2.5 o C/W
ELECTRICAL CHARACTERISTICS
(Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICES Collector Cut-off
Current (VBE =0)
VCE= 1200V 200 μA
ICEO Collector Cut-off
Current(IB =0)
VEC =380V
VEC =600V
IEBO Emitter Cut-off Current
(IC =0)
VBE =7V 1 mA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage= 100 mA 600 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =3.5A IB =0.7A =2.5A IB =0.35A
VBE(sat)∗ Base-Emitter
Saturation Voltage =3.5A IB =0.7A =2.5A IB =0.35A
tON
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
vCC =250v IC =3.5A
IB1 =0.7A IB1 =-1.4A
tON
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
vCC =250v IC =3.5A
IB1 =0.7A IB1 =-1.4A
With Antisaturation Network
tON
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
VCC =250V IC =3.5A
IB1 =0.7A VBE(off)=-5V
Storage Time
Fall Time
INDUCTIVE LOAD =3.5A hFE =5
VCL= 450V VBE(off) =-5V= 300 μHRBB =1.2Ω
Storage Time
Fall Time
INDUCTIVE LOAD =3.5A hFE =5
VCL= 450V VBE(off) =-5V= 300 μHRBB =1.2Ω= 100oC
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
SGSIF344/ SGSIF444

2/7
Safe Operating Area
Derating Curve
Collector Emitter Saturation Voltage
Reverse Biased SOA Current Gain
Base Emitter Saturation Voltage
SGSIF344/ SGSIF444

3/7
Resistive Load Switching Times InductiveLoad SwitchingTimes
Switching Times Percentance Variation
SGSIF344/ SGSIF444

4/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.4 0.7 0.015 0.027 0.75 1 0.030 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 0.630 28.6 30.6 1.126 1.204 9.8 10.6 0.385 0.417 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 3 3.2 0.118 0.126 G3
ISOWATT220 MECHANICAL DATA

P011G
SGSIF344/ SGSIF444

5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
5.35 5.65 0.210 0.222 3.3 3.8 0.130 0.149 2.9 3.1 0.114 0.122 1.88 2.08 0.074 0.081 0.75 1 0.029 0.039 1.05 1.25 0.041 0.049 10.8 11.2 0.425 0.441 15.8 16.2 0.622 0.637 20.8 21.2 0.818 0.834 19.1 19.9 0.752 0.783 22.8 23.6 0.897 0.929 40.5 42.5 1.594 1.673 4.85 5.25 0.190 0.206 20.25 20.75 0.797 0.817 3.5 3.7 0.137 0.145 2.1 2.3 0.082 0.090 4.6 0.1813
P025C
ISOWATT218 MECHANICAL DATA
SGSIF344/ SGSIF444

6/7
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