SGS23N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditions ..
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SGS23N60UFDTU
Discrete, High Performance IGBT with Diode
SGS23N60UFD April 2001 IGBT SGS23N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.1 V @ I = 12A CE(sat) C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : t = 42ns (typ.) rr a required feature. Application AC & DC Motor controls, general purpose inverters, robotics, servo controls C G TO-220F E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGS23N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C23 A C I C Collector Current @ T = 100°C12 A C I Pulsed Collector Current 92 A CM (1) I Diode Continuous Forward Current @ T = 100°C12 A F C I Diode Maximum Forward Current 92 A FM P Maximum Power Dissipation @ T = 25°C73 W D C Maximum Power Dissipation @ T = 100°C29 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 1.7 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 SGS23N60UFD Rev. A
