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SGR20N40LTF-SGR20N40LTM-SGU20N40LTU Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
SGR20N40LTFFAIN/a584avaiDiscrete, IGBT
SGR20N40LTFFSCN/a2500avaiDiscrete, IGBT
SGR20N40LTMFAIN/a11998avaiDiscrete, IGBT
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SGU20N40LTUFAIRCHILDN/a2240avaiDiscrete, IGBT


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SGR20N40LTF-SGR20N40LTM-SGU20N40LTU
Discrete, IGBT
SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench • High input impedance gate structure provide superior conduction and switching • High peak current capability (150A) performance in comparison with transistors having a planar • Easy gate drive gate structure. They also have wide noise immunity. These • Surface Mount : SGR20N40L devices are very suitable for strobe applications • Straight Lead : SGU20N40L Application Strobe flash. C C C G G D-PAK G E I-PAK GE C E E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGR / SGU20N40L Units V Collector - Emitter Voltage 400 V CES V Gate - Emitter Voltage ± 6V GES I Pulsed Collector Current 150 A CM (1) P Maximum Power Dissipation @ T = 25°C45 W C C T Operating Junction Temperature -40 to +150 °C J T Storage Temperature Range -40 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 3.0 °C/W θJC R (D-PAK) Thermal Resistance, Junction-to-Ambient (PCB Mount) -- 50 °C/W θJA (2) R (I-PAK) Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA Notes : (2) Mounted on 1” square PCB (FR4 or G-10 Material) ©2001 SGR20N40L / SGU20N40L Rev. A1
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