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SGB02N60SIEMENSN/a1027avaiIGBTs & DuoPacks
SGP02N60INFINEONN/a500avaiIGBTs & DuoPacks


SGB02N60 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V 600 - - VV =0V, I =500µ A(BR)CES GE CCollector- ..
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SGB02N60-SGP02N60
IGBTs & DuoPacks
SGP02N60,SGB02N60
SGD02N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings

SGP02N60,SGB02N60
SGD02N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
SGP02N60,SGB02N60
SGD02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic

Turn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V, IC=2A,
VGE=0/15V,
RG=118Ω,1)=180nH,1)=180pFEnergy losses include
“tail” and diode
SGP02N60,SGB02N60
SGD02N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
12A
14A
COLLE
OR CURRE10V100V1000V
0.01A
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118Ω)
Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
10W
15W
20W
25W
30W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as afunction of case temperature

(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature

(VGE ≤ 15V, Tj ≤ 150°C)
SGP02N60,SGB02N60
SGD02N60
COLLE
OR CURRE
COLLE
OR CURRE0A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics

(Tj = 25°C)
Figure 6. Typical output characteristics

(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
CE(sat)
COLLE
CTOR
ITT
SATU
ATI
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature
(VGE = 15V)
SGP02N60,SGB02N60
SGD02N60
ITC
TI1A2A3A4A5A10ns
100ns
ITC
TI100Ω200Ω300Ω400Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current

(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,Dynamic test circuit in Figure E)
ITC
TI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltageas a function of junction temperature

(IC = 0.15mA)
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