SGM2N60UFTF ,Discrete, High Performance IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. DC CG ..
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SGM2N60UF-SGM2N60UFTF
Discrete, High Performance IGBT
SGM2N60UF IGBT SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.1 V @ I = 1.2A CE(sat) C The UF series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. D C C G G S G E E SOT-223 Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGM2N60UF Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C2.4 A C I C Collector Current @ T = 100°C1.2 A C I Pulsed Collector Current 10 A CM (1) P Maximum Power Dissipation @ T = 25°C2.1 W D a - Derate above 25°C 0.017 W/°C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Ambient (PCB Mount) -- 60 °C/W θJA (2) Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2003 SGM2N60UF Rev.A
