SGL160N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
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SGL160N60UFDTU
Discrete, High Performance IGBT with Diode
SGL160N60UFD IGBT SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V (sat) = 2.1 V @ I = 80A CE C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD: t = 75nS (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. C C G G TO-264 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGL160N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C 160 A C I C Collector Current @ T = 100°C80 A C I Pulsed Collector Current 300 A CM (1) I Diode Continuous Forward Current @ T =100°C25 A F C I Diode Maximum Forward Current 280 A FM P Maximum Power Dissipation @ T = 25°C 250 W D C Maximum Power Dissipation @ T = 100°C 100 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.5 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 25 °C/W θJA ©2002 SGL160N60UFD Rev. B1
