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SGH40N60UFDTUFSCN/a142avaiDiscrete, High Performance IGBT with Diode
SGH40N60UFDTUN/a452avaiDiscrete, High Performance IGBT with Diode
SGH40N60UFDTUN/AN/a452avaiDiscrete, High Performance IGBT with Diode


SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeFeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors• High speed switching(IGBTs) ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH80N60UF ,Ultra-Fast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls.C CG GE ..
SGH80N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH80N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
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SGH40N60UFDTU
Discrete, High Performance IGBT with Diode
SGH40N60UFD IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.1 V @ I = 20A CE(sat) C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : t = 42ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-3P E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGH40N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C40 A C I C Collector Current @ T = 100°C20 A C I Pulsed Collector Current 160 A CM (1) I Diode Continuous Forward Current @ T = 100°C15 A F C I Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation @ T = 25°C 160 W D C Maximum Power Dissipation @ T = 100°C64 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.77 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.7 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 SGH40N60UFD Rev. A1
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