SGH30N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFD ,Ultra-Fast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeFeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors• High speed switching(IGBTs) ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH80N60UF ,Ultra-Fast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls.C CG GE ..
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SGH30N60RUFD
Short Circuit Rated IGBT
SGH30N60RUFD IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ T = 100°C, V = 15V C GE Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : V = 2.2 V @ I = 30A CE(sat) C series is designed for applications such as motor control, • High input impedance uninterrupted power supplies (UPS) and general inverters • CO-PAK, IGBT with FRD : t = 50ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E E TO-3P G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGH30N60RUFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C48 A C I C Collector Current @ T = 100°C30 A C I Pulsed Collector Current 90 A CM (1) I Diode Continuous Forward Current @ T = 100°C25 A F C I Diode Maximum Forward Current 220 A FM T Short Circuit Withstand Time @ T =100°C10 us SC C P Maximum Power Dissipation @ T = 25°C 235 W D C Maximum Power Dissipation @ T = 100°C90 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.53 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 SGH30N60RUFD Rev. B1
