SGF23N60UFDTU ,Discrete, High Performance IGBTElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditions ..
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SGF23N60UFDTU
Discrete, High Performance IGBT
SGF23N60UFD June 2001 IGBT SGF23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD • High Speed Switching series provides low conduction and switching losses. • Low Saturation Voltage : V = 2.1 V @ I = 12A CE(sat) C UFD series is designed for the applications such as motor • High Input Impedance control and general inverters where High Speed Switching • CO-PAK, IGBT with FRD : t = 42ns (typ.) rr is required. Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C C G G TO-3PF TO-3PF E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGF23N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C23 A C I C Collector Current @ T = 100°C12 A C I Pulsed Collector Current 92 A CM (1) I Diode Continuous Forward Current @ T = 100°C12 A F C I Diode Maximum Forward Current 92 A FM P Maximum Power Dissipation @ T = 25°C75 W D C Maximum Power Dissipation @ T = 100°C30 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 1.6 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 3.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 SGF23N60UFD Rev. A
