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SGB15N60HS
IGBTs & DuoPacks
SGB15N60HSHigh Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:- parallel switching capability
- moderate Eoff increase with temperature- very tight parameter distributionHigh ruggedness, temperature stable behaviourComplete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSGB15N60HS
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic CharacteristicInput capacitance
Reverse transfer capacitance
SGB15N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT CharacteristicTurn-on delay time
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V,IC=15A,
VGE=0/15V,RG= 23Ω1)=60nH,1)=40pFEnergy losses include
“tail” and diode
SGB15N60HSCOLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
COLLE
OR CURRE10V100V1000V
0,1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1.Collector current as a function ofswitching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
Figure 2.Safe operating area(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
R DIS
25°C50°C75°C100°C125°C0W
20W
40W
60W
80W
100W
120W
140W
COLLE
OR CURRE
10A
20A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3.Power dissipation as a function of
case temperature(Tj ≤ 150°C)
Figure 4.Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGB15N60HSCOLLE
OR CURRE
10A
30A
COLLE
OR CURRE
10A
20A
30A
40A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5.Typical output characteristic(Tj = 25°C)
Figure 6.Typical output characteristic(Tj = 150°C)
COLLE
OR CURRE0A
20A
40A
at),
COLLE
CTOR
ITT SAT
VO
-50°C0°C50°C100°C150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
VGE, GATE-EMITTER VOLTAGETJ, JUNCTION TEMPERATURE
Figure 7.Typical transfer characteristic(VCE=10V)
Figure 8.Typical collector-emitter
saturation voltage as a function ofjunction temperature(VGE = 15V)
SGB15N60HSt,
ITC
TI10A20A1ns
10ns
100ns
t,
ITC
TI10Ω20Ω30Ω40Ω1 ns
10 ns
100 ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9.Typical switching times as afunction of collector current(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as afunction of gate resistor(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
D VO
-50°C0°C50°C100°C150°C1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
TJ, JUNCTION TEMPERATURETJ, JUNCTION TEMPERATURE
Figure 11.Typical switching times as a
function of junction temperature(inductive load, VCE=400V,
VGE=0/15V, IC=15A, RG=23Ω,Dynamic test circuit in Figure E)
Figure 12.Gate-emitter threshold voltage as
a function of junction temperature(IC = 0.5mA)
