SFH611A-4 ,TRIOS Single Channel Optocoupler, GaA...features a high current transfer ratio, low coupling capacitance and high isolation voltage. These ..
SFH611A-4X001 ,TRIOS Single Channel Optocoupler, GaA...FEATURESDimensions in Inches (mm)• High Current Transfer Ratios2 1at 10 mA: 40–320%SFH610Apin one I ..
SFH6136 ,High Speed Optocoupler, 1 MBd, Transistor Output Document Number 836684 Rev. 1.4, 27-Apr-04SFH6135/ SFH6136VISHAYVishay SemiconductorsTypical Chara ..
SFH6138 ,High Speed Optocoupler, 100 kBd, Low Input Current, High GainRev. 1.4, 27-Apr-04 3SFH6138/ SFH6139VISHAYVishay SemiconductorsSwitching CharacteristicsDelay Time ..
SFH6138 ,High Speed Optocoupler, 100 kBd, Low Input Current, High Gainabsolute Maximum Ratings can cause permanent damage to the device. Functional operation of the devi ..
SFH6139 ,High Speed Optocoupler, 100 kBd, Low Input Current, High GainElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambMinimum and maximum values are te ..
SI4922BDY-T1-E3 , Dual N-Channel 30-V (D-S) MOSFET
SI4922DY ,Dual N-Channel 30-V (D-S) MOSFETS-20112—Rev. B, 11-Mar-02 3I – Source Current (A) V – Gate-to-Source Voltage (V) r – On-Resistan ..
SI4922DY ,Dual N-Channel 30-V (D-S) MOSFETS-20112—Rev. B, 11-Mar-02 1Si4922DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI4923DY ,Dual P-Channel 30-V (D-S) MOSFETS-22120—Rev. A, 25-Nov-021Si4923DYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SI4924DY ,Asymetrical Dual N-Channel 30-V (D-S) MOSFETS-03950—Rev. B, 26-May-031Si4924DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
SI4924DY-T1 , Asymetrical Dual N-Channel 30-V (D-S) MOSFET
SFH611A-3-SFH611A-4-SFH611A-4X001
TRIOS Single Channel Optocoupler, GaA...
FEATURESHigh Current Transfer Ratios
at 10 mA: 40–320%
at 1.0 mA: 60% typical (>13)Low CTR DegradationGood CTR Linearity Depending on Forward CurrentWithstand Test Voltage, 5300 V
RMSHigh Collector-Emitter Voltage, V
CEO
=70 VLow Saturation VoltageFast Switching TimesField-Effect Stable by TRIOS
(TRansparent IOn Shield)Temperature StableLow Coupling CapacitanceEnd-Stackable, .100" (2.54 mm) SpacingHigh Common-Mode Interference Immunity
(Unconnected Base)Underwriters Lab File #52744SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTIONThe SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Specifications subject to change.
Characteristics =25°C)
Current Transfer Ratio at V
=5 V)
and Collector-Emitter Leakage Current by Dash Number
Switching Times (Typical)
Linear Operation (without saturation)
Switching Operation (with saturation)
Figure 1. Current transfer ratio (typ.)
vs. temperature=10 mA, V
=5 V
Figure 2. Output characteristics (typ.)
Collector current vs. collector-emitter
voltage =25°C
Figure 3. Diode forward voltage
(typ.) vs. forward current
Figure 7. Permissible diode forward
current vs. ambient temp.
Figure 4. Transistor capacitance (typ.) vs.
collector-emitter voltage=25°C, f=1 MHz
Figure 5. Permissible pulse handling
capability. Forward current vs. pulse
width Pulse cycle D=parameter, T
=25°C
Figure 6. Permissible power
dissipation vs. ambient temperature
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