SDT12S60 ,Silicon Carbide Schottky DiodesPreliminary dataSDT12S60 SDT12S60Silicon Carbide Schottky Diode
SDT12S60
Silicon Carbide Schottky Diodes
SDT12S60SDT12S60Preliminary data
Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor
material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on
the switching behavior No forward recovery
Product SummaryP-TO220-2-2.
SDT12S60SDT12S60Preliminary data
Thermal Characteristics
Characteristics
Static Characteristics
AC Characteristics
SDT12S60SDT12S60Preliminary data
1 Power dissipation tot = f (TC)
10
20
30
40
50
60
70
90
tot
2 Diode forward current F= f (TC)
parameter: Tj175 °C
10
12
14
16
18
20
4 Typ. forward power dissipation vs.
average forward current F(AV)=f(IF) TC=100°C, d = tp/T
12
16
20
24
28
32
36
44
F(AV)
3 Typ. forward characteristic F = f (VF)
parameter: T , tp = 350 µs
12
16
24
SDT12S60SDT12S60Preliminary data
6 Transient thermal impedance thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJC
5 Typ. reverse current vs. reverse voltageR=f(VR)
-3 10
-2 10
-1 10 10 10 10
8 Typ. C stored energy C=f(VR)
7 Typ. capacitance vs. reverse voltage C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
50
100
150
200
250
300
350
400
450
500
SDT12S60SDT12S60Preliminary datac=f(diF/dt)
parameter: Tj = 150 °C
100200300400500600700800A/µs1000
12
16
20
24
28
32
40
SDT12S60SDT12S60Preliminary data
