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SDT04S60 |SDT04S60Infineon N/a6000avaiSilicon Carbide Schottky Diodes


SDT04S60 ,Silicon Carbide Schottky DiodesSDP04S60, SDD04S60Final dataSDT04S60Silicon Carbide Schottky Diode• Worlds first 600V Schottky diod ..
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SDT04S60
Silicon Carbide Schottky Diodes
SDP04S60, SDD04S60
SDT04S60Final data
Silicon Carbide Schottky Diode

• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W1)
• No forward recovery
Product Summary

P-TO220-2-2.P-TO252-3-1.P-TO220-3-1.
Maximum Ratings, at T
j = 25 °C, unless otherwise specified
SDP04S60, SDD04S60
SDT04S60Final data
Thermal Characteristics
Characteristics
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Static Characteristics
CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%
SDP04S60, SDD04S60
SDT04S60Final data
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
AC Characteristics
SDP04S60, SDD04S60
SDT04S60Final data
1 Power dissipation
tot = f (TC)
10
15
20
25
30
40
tot
2 Diode forward current
F= f (TC)
parameter: Tj≤175 °C
0.5
1.5
2.5
3.5
4.5
4 Typ. forward power dissipation vs.
average forward current
F(AV)=f(IF) TC=100°C, d = tp/T
10
12
14
18
F(AV)
3 Typ. forward characteristic
F = f (VF)
parameter: T
SDP04S60, SDD04S60
SDT04S60Final data
5 Typ. reverse current vs. reverse voltage
R=f(VR)
-3 10
-2 10
-1 10 10 10 10
6 Transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJC
8 Typ. C stored energy
C=f(VR)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
7 Typ. capacitance vs. reverse voltage

C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
25
50
75
125
SDP04S60, SDD04S60
SDT04S60Final data
c=f(diF/dt)
parameter: Tj = 150 °C
10
14
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