SD241 ,V(rwm): 35V; 60A dual schottky center tap rectifierFeatures
The 4OCDO and 60000 Dual Schottky Rectifier Serlas and SD241
employ the "830" process ..
SD25-4R7-R , Switching Regulators
SD25-R47 , High Power Density, Low Profile, Shielded Inductors
SD2904 ,RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETsSD2904®RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs■ GOLD METALLIZATION■ COMMON SOURCE CONFIGU ..
SD306 , FAN CONTROLLER
SD3110-R50-R , Low Profile Power Inductors
SGA-6589 , DC 4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK
SGA-6589Z , DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA-6589Z , DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA-7489Z , DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block
SGA-8343 , Low Noise, High Gain SiGe HBT
SGA-8343 , Low Noise, High Gain SiGe HBT
SD241
V(rwm): 20V; 40A dual schottky center tap rectifier
INTERNATIONAL RECTIFIER _
48 554-52 {NTER'NAT ION AT -Rie ii t ik'
INTE RNATIONAL RECTI Fl E R
55 Denuassusa UUUSD‘l i, f]
Data Sheet No. PD-2.0583
5 5 C 0 5 o 9 7
T» tr-or
4DCDG tik BDCDG SERIES AND SDE4‘I
4D and 60 Amp Dual Schottky
Center- Tap Rectifiers
Major Ratings and Characteristics
Characteristics 4OCDO SD241 GOCDO Units
lo Rectangular Waveform 40 60 60 A
Sinusoidal Waveform 36 54 54
IFSM o 50 Hz 380 475 A
o 60 Hz 400 600
12t © so Hz 730 1140 2
tip 60 Hz 665 1040
|24/T 10,325 16,130 A2vrs-
_ VRWM 20 - 45 35 20 - 46 v
Ct @ -5V 1400 pF
Tg -55 to 175 00
CASE STYLE AND DIMENSIONS
2222 (0.875)
MAX. DIA.
'ls', " (
1.09 (0.043)
MAX. DIA.
3935 (1.573)
Description/Features
The 40CDQ and 60600 Dual Schottky Rectifier Serles and $0241
employ the "MO'' process which results In a vary low ratio of reverse
leakage current to Iurustlon temperature. In addition to offering lm-
provemems In reliability and performance, thtry are rugged devices
with a guaranteed repetitive peak reverse voltage capability, and ex-
callent abllity to whhstand reverse energy transients. They can be
used In bath aximnu and new designs.
I 176°C Tg tsparatiort
100% revevse energy tasted (each Junction)
400A and 500A surge, 60 Hz, one cycle (per Junction)
Extremely low reverse leakage: " mA © 25°C
No voltage darating of VRWM over temperature range
A guaramead repetitive peak reverse voltage capability
for short pulses which Is 20% above VRWM
High power supply reliability
Minimizes problem of thermal runaway
I TO-ZMAE (Modlfled TOG) Case Style available
(60600 serles)
I Can be supplied to meet nringent military, aerospace
and other high-reliability requirements.
" 22 lo 875
MAXJIIA. 11.43 0050
L4 “+1135“;
(0115) MAX,
__smmc
.50 ms ms om ms mu
1dis'h"dilmA. on Wm..”.. "y/JI/dll on I/i-IN-el-ll
1050) 'u-i
re" 17.14 {0.515 t
fwo PLACES TWO mess Two runes
me o IBI w
til/this'') .
iiii PLACES
ft.5NIMAX,
30. ' 1.!!7
WU"; I
67t a 22lilt
COMMON I N
cnuons l i
mane I
ANODE 2 f
t MEASURED AT
COMMDN SEATING PLANE
CATHODE
--lltll (n'uun
Conforms to JEDEG Outline TO-204AA trom
*Confurms to JEDEC Outline TO-204AE (Modified TOG)
All Dimensions in Millimeters and (Inches)
.... .w——_..._.........
40CDt1tk60CDt1 Series and SD241 - _
4855452 INTERNATIONAL RECTIFIER,
INTERNATIONAL RECTIFIER TOR
ss DEDLIBSSLISE 110135013 n T
55C 05098 D
VOLTAGE RATINGS PER JUNCTION
. _ VRRM - Max.
VRWM - Max. Repetitive Peak
' Wqrking Peak Reverse Voltage (V)@ VF! - Max. Direct
Part Numbers Reverse Vultage (V) (D tti, " 200 ns Max.) Reverse Voltage MC)
40000020 _ 60000020 20 24 20
40000030 - 60000030 "to ' _ " 36 30
40000035 SD241 60000035 35 (i) 42 CD 35
40000040 - 60000040 40 48 40
40000045 ' - 60000045 - 45 . 64 l - 45
ELECTRICAL SPECIFICATIONS -r: JI 3 -0 C
40000 SD241 GOCDQ Units Conditions
lo Max. average output qurtem 40 60 60 180° conduction, rectangular waveform, To '* -40 to
from centitr tap circuit ' 143°C tor 40000, Tc = MO to 120°C for 60000.
. 180° conduction, sinusoidal waveform, T = -40 to
36 M 64 C
141°C for 40000, To a -40 to 116°C for 60000.
I Max. peak one cycle, non- 60 Hz half cycle sine wave .
- FSM repetitive surge current, .380 475 or 6 ms rectangular pulse, Follciolzmg SI reign! ling
er junction A . con on T. w us a
p 400 600 60 Hz half cycle sme wave VRWM applied.
or 5 ms rectangular pulse,
455 670 A tio Hz With VRWM " o following surge,
476 595 60 Hz initial Tg = 175°C.
A Max._l2t for fusing, per 730 1140 2 tw 10 ms, Rated VRWM following surge,
function 665 1040 A s t " 8.3 ms. initial Tg " 1760C.
lzt Max. 12t for individual 1030 1610 . t" 10 ms. V following surge = 0,
. ti f . j l . A2 RWM
mm: on using. per unct on 940 1470 s " 8.3 ms. Initial Tg = 176°C.
l2xft- Max. I2 s/t-tor individual (i) 2 " o a
junction fusing, per iunetitm 10,325 16,130 A x/s- .t 0.1 to 10 ms, Tu . 175 C, VRWM " 0 following surge.
V Max. peak forward voltage IFM " 20A peak for 40000 I " 30A
FM per luncdon 0.70 0.82 Tg " 25°C peak for 60000 and $0241! FM
0 1800 rectangular wave.
0.91 1.09 V Tg = 25 C Rated 'F(AV) (40A peak far 40000, 60A
peak far 60000 and SD241)
' th74 0.92 TJ = 1750C 180° rectangular wava.
IRM Max. peak reverse current, 10 Tg = 25°C
per lunction mA VRM " rated VRWM .
20 T J " 1250c
l ' Max. repetitive peak Tc " atioc, = 2 us recta'ngular pulse f " 1 kHz.
RRM reverse current 2.0 A to see th. 11 for test cl'rcuit. C)
Ct Max. cT.ateitance, 1400 pF Tc = 25°C. VR " 5 We (Test signal in the range of
per junction 100 kHz to 1 MHZ) . -
dv/dt Max. rate of application of - o =
reverse vokaga, per junction 1000 V/ps Tc - 25 c, VRM rated VFWM
THERMAL-MECHANICAL SPECI FICATIONS
T Max. operating junction
J temper8ture range '55 to 175 cc
T Max. storage temperature - . o
Mg range 55 to 176 C
thJC feat','.',',',':':,,",',""'"'' 1 4 Based on power dissipated in one Iunctlon, both
- DC operation ' . lunctlons opamdng.
Max. composite thermal " NI
resistance, functitrtt-ttrcate, 0.7 Based on power dissipated In both Junctions.
DC operation
RthCS 2sg't'e2,ti'tan"' 0.2 deg. CIW Mounting surface flat, smooth and greased.
wt Approximate weight It.8 (0.45) 9 (02.)
Case $1er . " TO-204AA T0204AE Terminals 1 and 2: Anodes 1 and 2
(TO-3) (Modififd Case: Common Cathode:
Ci) TC = -55 to 172°C, 1800 conduction
Ciy For SD241 rated VRWM and
VRRM = 461/. © Tg = 25oty,
= 35V @ Tg =150°c
co TC " 0 to 172°C, 180° conduction
co I21 for time tx." iur, . JC .
(i) Tc " -55 to 162°C.
CD For test clrcuit refer to Fig. 11.
.v...-............ . _-_ -
