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SA616DK
Low-voltage high performance mixer FM IF system
1. General descriptionThe SA616 is a low-voltage high performance monolithic FM IF system incorporating a
mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
logarithmic Received Signal Strength Indicator (RSSI), voltage regulator and audio and
RSSI op amps. The SA616 is available in SSOP20 and HVQFN20 packages.
The SA616 was designed for portable communication applications and will function down
to 2.7 V. The RF section is similar to the famous SA615. The audio and RSSI outputs
have amplifiers with access to the feedback path. This enables the designer to adjust the
output levels or add filtering.
2. Features and benefits Low power consumption: 3.5 mA typical at 3V Mixer input to >150 MHz Mixer conversion power gain of 17 dB at 45 MHz XTAL oscillator effective to 150 MHz (LC oscillator or external oscillator can be used at
higher frequencies) 102 dB of IF amp/limiter gain2 MHz IF amp/limiter small signal bandwidth Temperature compensated logarithmic RSSI with a 80 dB dynamic range Low external component count; suitable for crystal/ceramic/LC filters Excellent sensitivity: 0.31 V into 50 matching network for 12 dB SINAD
(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at
455 kHz SA616 meets cellular radio specifications Audio output internal op amp RSSI output internal op amp Internal op amps with rail-to-rail outputs ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per
JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B
3. Applications Portable cellular radio FM IF Cordless phones Wireless systems RF level meter
SA616
Low-voltage high performance mixer FM IF system
Rev. 5 — 24 July 2012 Product data sheet
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system Spectrum analyzer Instrumentation FSK and ASK data receivers Log amps Portable high performance communication receiver Single conversion VHF receivers
4. Ordering information
5. Block diagram
Table 1. Ordering informationTamb= 40 C to +85C
SA616DK/01 SA616DK SSOP20 plastic shrink small outline package; 20 leads;
body width 4.4 mm
SOT266-1
SA616BS 616B HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; terminals; body44 0.85 mm
SOT917-1
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
6. Pinning information
6.1 PinningNXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
6.2 Pin description[1] HVQFN20 package supply ground is connected to both GND pin and exposed center pad. GND pin must
be connected to supply ground for proper device operation. For enhanced thermal, electrical, and board
level performance, the exposed pad needs to be soldered to the board using a corresponding thermal pad
on the board and for proper heat conduction through the board, thermal vias need to be incorporated in the
PCB in the thermal pad region.
Table 2. Pin descriptionRF_IN 1 19 RF input
RF_IN_DECOUPL 2 20 RF input decoupling pin
OSC_OUT 3 1 oscillator output
OSC_IN 4 2 oscillator input
RSSI_OUT 5 3 RSSI output
VCC 6 4 positive supply voltage
AUDIO_FEEDBACK 7 5 audio amplifier negative feedback terminal
AUDIO_OUT 8 6 audio amplifier output
RSSI_FEEDBACK 9 7 RSSI amplifier negative feedback terminal
QUADRATURE_IN 10 8 quadrature detector input terminal
LIMITER_OUT 11 9 limiter amplifier output
LIMITER_DECOUPL 12 10 limiter amplifier decoupling pin
LIMITER_DECOUPL 13 11 limiter amplifier decoupling pin
LIMITER_IN 14 12 limiter amplifier input
GND 15 13[1] ground; negative supply
IF_AMP_OUT 16 14 IF amplifier output
IF_AMP_DECOUPL 17 15 IF amplifier decoupling pin
IF_AMP_IN 18 16 IF amplifier input
IF_AMP_DECOUPL 19 17 IF amplifier decoupling pin
MIXER_OUT 20 18 mixer output - DAP exposed die attach paddle
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
7. Functional descriptionThe SA616 is an IF signal processing system suitable for second IF systems with input
frequency as high as 150 MHz. The bandwidth of the IF amplifier and limiter is at least MHz with 90 dB of gain. The gain/bandwidth distribution is optimized for 455 kHz,
1.5 k source applications. The overall system is well-suited to battery operation as well
as high performance and high quality products of all types.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 6.2 dB, conversion gain of 17 dB, and input third-order intercept of 9 dBm. The oscillator will operate in excess of 200 MHz in L/C tank configurations.
Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler
oscillators are recommended for crystal configurations up to 150 MHz.
The output impedance of the mixer is a 1.5 k resistor permitting direct connection to a
455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5 k. With
most 455 kHz ceramic filters and many crystal filters, no impedance matching network is
necessary. The IF amplifier has 43 dB of gain and 5.5 MHz bandwidth. The IF limiter has dB of gain and 4.5 MHz bandwidth.
To achieve optimum linearity of the log signal strength indicator, there must be a 12 dBV
insertion loss between the first and second IF stages. If the IF filter or interstage network
does not cause 12 dBV insertion loss, a fixed or variable resistor or an L pad for
simultaneous loss and impedance matching can be added between the first IF output
(IF_AMP_OUT) and the interstage network. The overall gain will then be 90 dB with MHz bandwidth.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
The demodulated output of the quadrature drives an internal op amp. This op amp can be
configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order
temperature compensation if needed. It can drive an AC load as low as 5 k with a
rail-to-rail output.
A log signal strength completes the circuitry. The output range is greater than 90 dB and is
temperature compensated. This log signal strength indicator exceeds the criteria for
AMPS or TACS cellular telephone. This signal drives an internal op amp. The op amp is
capable of rail-to-rail output. It can be used for gain, filtering, or second-order temperature
compensation of the RSSI, if needed.
Remark: dBV = 20log VO/VI.
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
8. Limiting values
9. Thermal characteristics
10. Static characteristics
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage - 7 V
Tstg storage temperature 65 +150 C
Tamb ambient temperature operating 40 +85 C
Table 4. Thermal characteristicsZth(j-a) transient thermal impedance
from junction to ambient
SA616DK/01 (SSOP20) 117 K/W
SA616BS (HVQFN20) 40 K/W
Table 5. Static characteristicsVCC =3V; Tamb =25 C; unless specified otherwise.
VCC supply voltage 2.7 - 7.0 V
ICC supply current - 3.5 5.0 mA
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
11. Dynamic characteristicsTable 6. Dynamic characteristicsTamb =25 C; VCC=3 V; unless specified otherwise. RF frequency = 45 MHz+ 14.5 dBV RF input step-up. frequency= 455 kHz; R17= 2.4 k and R18= 3.3 k. RF level= 45 dBm; FM modulation=1 kHz with 8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Mixer/oscillator section (external LO = 220 mV RMS value) input frequency - 150 - MHz
fosc oscillator frequency - 150 - MHz noise figure at 45 MHz - 6.8 - dB
IP3I input third-order intercept point 50 source; =45.0MHz;f2=45.06MHz;
input RF level= 52 dBm 9- dB
Gp(conv) conversion power gain matched 14.5 dBV step-up 11 17 - dB source - 2.5 - dB
Ri(RF) RF input resistance single-ended input - 8 - k
Ci(RF) RF input capacitance - 3.0 4.0 pF
Ro(mix) mixer output resistance MIXER_OUT pin 1.25 1.5 - k
IF sectionGamp(IF) IF amplifier gain 50 source - 44 - dB
Glim limiter gain 50 source - 58 - dB
Pi(IF) IF input power for 3 dB input limiting sensitivity;
R17=2.4k; R18=3.3k
(Figure 21); test at IF_AMP_IN pin 105 - dBm
AM AM rejection 80 % AM 1 kHz - 40 - dB
Vo(aud) audio output voltage gain of two (2 k AC load) 60 120 - mV
SINAD signal-to-noise-and-distortion ratio IF level 110 dBm - 17 - dB
THD total harmonic distortion 30 45 - dB
S/N signal-to-noise ratio no modulation for noise - 62 - dB
Vo(RSSI) RSSI output voltage RF; R9=2k
RF level = 118 dBm - 0.3 0.8 V
RF level = 68 dBm 0.7 1.1 2 V
RF level = 23 dBm 1.0 1.8 2.5 V
RSSI(range) RSSI range - 80 - dB
RSSI RSSI variation - 2- dB
Zi(IF) IF input impedance IF_AMP_IN pin 1.3 1.5 - k
Zo(IF) IF output impedance IF_AMP_OUT pin - 0.3 - k
Zi(lim) limiter input impedance LIMITER_IN pin 1.3 1.5 - k
Zo(lim) limiter output impedance LIMITER_OUT pin - 0.3 - k
Vo(RMS) RMS output voltage LIMITER_OUT pin - 130 - mV
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
12. Performance curves
RF/IF section (internal LO)Vo(aud)RMS RMS audio output voltage VCC=3 V; RF level = 27 dBm - 120 - mV
Vo(RSSI) RSSI output voltage system; VCC =3V; level= 27 dBm
-2.2 - V
SINAD signal-to-noise-and-distortion ratio system; RF level = 117 dBm - 12 - dB
Table 6. Dynamic characteristics …continuedTamb =25 C; VCC=3 V; unless specified otherwise. RF frequency = 45 MHz+ 14.5 dBV RF input step-up. frequency= 455 kHz; R17= 2.4 k and R18= 3.3 k. RF level= 45 dBm; FM modulation=1 kHz with 8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
13. Application informationNXP Semiconductors SA616
Low-voltage high performance mixer FM IF system[1] This is a 30 kHz bandwidth 455 kHz ceramic filter. Al the characterization and testing are done with this
wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an
alternative selection is Murata CFUKG455KE4A-R0.
[2] R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.
Recommended value is 22 k, but should not be below 10k.
Table 7. SA616DK demo board component list
NXP Semiconductors SA616
Low-voltage high performance mixer FM IF system
