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S5295GTAIWAN N/a20800avaiFast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
S5295GTOSHIBAN/a4500avaiFast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
S5295JTOSN/a100avaiFast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)


S5295G ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)Applications (fast recovery) Unit: mm  Average Forward Current: I = 0.5 A (Ta = 50°C) F (AV) ..
S5295G ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)Applications (fast recovery) Unit: mm  Average Forward Current: I = 0.5 A (Ta = 50°C) F (AV) ..
S5295J ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J ..
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SA90A ,500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORSELECTRICAL CHARACTERISTICS (T = 25°C unlessAIotherwise noted, V = 3.5 V Max. @ I (Note 6) = 35 A)F ..
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S5295G-S5295J
Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J

High Speed Rectifier Applications (fast recovery) Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: 1.5 µs Plastic Mold Type.
Maximum Ratings

Electrical Characteristics (Ta �
�� � 25°C) Vfr IF � 100 mA, tr � 100 ns, tw � 5 �s
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Unit: mm
Weight: 0.42 g (typ.)
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