| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| S29GL128N11TFIV10 |
SPANSION |
N/a |
357 |
 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology |
| S29GL128N11TFIV10 |
FUJITSU |Fujitsu Microelectronics |
N/a |
43 |
|
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology |
S29GL128N1TFI01
S29GL128N70TFI01 SPANSION
S29GL128N70TFI010 SPANSION
S29GL128N80TFIR20 SPANSOIN
S29GL128N90FAA010 SPANSION
S29GL128N90FAA020 SPANSION
S29GL128N11TFIV10 , 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
S29GL128N90FAI010 , 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
S29GL128N90FAI020 , 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
S29GL128N90FFI010 , 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
S29GL128N90FFI020 , 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
S-8437AF , INVERTING SWITCHING REGULATORS
S-8438AF , INVERTING SWITCHING REGULATORS
S-8491BUP-DKB-T2 , BATTERY PROTECTION IC
