S2800B ,Silicon controlled rectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
S2800D ,Silicon controlled rectifierTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2 °C/Wθ ..
S2800D. ,Silicon controlled rectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
S-2900AFE , CMOS 512-bit SERIAL EEPROM
S-2900AFE , CMOS 512-bit SERIAL EEPROM
S-2900AUP , CMOS 512-bit SERIAL EEPROM
S-817A33ANB-CUWT2G , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S-817A33ANB-CUWT2G , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S-817A35ANB-CUY-T2 , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S-817A35ANB-CUY-T2 , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S-817A40ANB-CVD-T2 , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S-817A40ANB-CVDT2G , SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
S2800B-S2800D-S2800D.
Silicon controlled rectifier
-
Reverse Blocking Triode Thyristors. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability Blocking Voltage to 800 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
