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RT1N230C from MITSUBISHI

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13.672ms

RT1N230C

Manufacturer: MITSUBISHI

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

Partnumber Manufacturer Quantity Availability
RT1N230C MITSUBISHI 86600 In Stock

Description and Introduction

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type **Enhance Your Circuit Designs with the RT1N230C Schottky Barrier Diode**  

In today’s fast-paced electronics industry, efficiency and reliability are paramount. The **RT1N230C Schottky Barrier Diode** stands out as a high-performance solution for applications requiring low forward voltage drop and fast switching speeds. Designed to minimize power loss and improve energy efficiency, this diode is an excellent choice for power supply circuits, voltage clamping, and reverse polarity protection.  

One of the key advantages of the RT1N230C is its **ultra-low forward voltage drop**, typically as low as 0.38V at 1A. This feature significantly reduces heat dissipation, enhancing overall system efficiency. Additionally, its **fast recovery time** ensures minimal switching losses, making it ideal for high-frequency applications such as DC-DC converters and switching regulators.  

With a **reverse voltage rating of 30V** and a **forward current capability of 1A**, the RT1N230C offers robust performance in compact designs. Its **small SOD-323 package** allows for space-saving PCB layouts, making it suitable for portable electronics, automotive systems, and industrial controls. The diode’s **high surge current tolerance** further ensures durability in demanding environments.  

Engineers and designers will appreciate the RT1N230C’s **consistent performance across a wide temperature range**, ensuring stable operation in varying conditions. Whether used in power management, signal rectification, or protection circuits, this Schottky diode delivers reliability and efficiency.  

For applications where energy efficiency and fast switching are critical, the RT1N230C provides a dependable solution that meets modern electronic design requirements. Its combination of low power loss, compact form factor, and high-speed performance makes it a valuable component in optimizing circuit performance.  

Upgrade your designs with the RT1N230C and experience the benefits of superior Schottky diode technology.

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