| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| RQJ0301HGDQSTL-E |
RENESAS |
N/a |
1000 |
 |
Silicon P Channel MOS FET Power Switching |
RQJ0302NGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0303PGDQATL RENESAS
RQJ0303PGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0304DQDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0304DQDQS RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0305EQDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0305EQDQS RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0306FQDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0306FQDQS RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0306FQDQSTL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0301HGDQSTL-E , Silicon P Channel MOS FET Power Switching
RQJ0601DGDQSTL-E , Silicon P Channel MOS FET Power Switching
RQJ0602EGDQATL-E , Silicon P Channel MOS FET Power Switching
RQK0601AGDQS , Silicon N Channel MOS FET Power Switching
RQK0603CGDQATL-H , Silicon N Channel MOS FET Power Switching
S106D , High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 % and Load Life Stability of ± 0.005 %
S1070W , SCRs 1-70 AMPS NON-SENSITIVE GATE
S10C60C , SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)
