| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| RQG1001UP-TL-E |
RENESAS |
N/a |
6000 |
 |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier |
RQG1001UP-TR-E RENESAS
RQG2001 RENESAS
RQJ0201UGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0202VGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0203WGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0204XGDQATL-E RENESAS, Silicon P Channel MOS FET Power Switching
RQJ0301HGDQS RENESAS, Silicon P Channel MOS FET Power Switching
RQG1001UP-TL-E , NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
RQJ0301HGDQSTL-E , Silicon P Channel MOS FET Power Switching
RQJ0601DGDQSTL-E , Silicon P Channel MOS FET Power Switching
RQJ0602EGDQATL-E , Silicon P Channel MOS FET Power Switching
RQK0601AGDQS , Silicon N Channel MOS FET Power Switching
S1065J , SCRs 1-70 AMPS NON-SENSITIVE GATE
S106D , High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 % and Load Life Stability of ± 0.005 %
S1070W , SCRs 1-70 AMPS NON-SENSITIVE GATE
