RN4610 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.APPLICATIONS.Including Two Devices in SM6 (Super Mini Type with 6 leads)- ~u--v - ~-uv -uvv-vvv-v2. ..
RN4612 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With bui ..
RN46A1 ,Transistor Silicon PNP ?NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Super-Mini (6 pin) package. Incorporati ..
RN47A2 ,Transistor Silicon NPN ?PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Inco ..
RN47A2JE ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Symbol Test Condition Min Typ. MaxUnitI ..
RN47A3 ,Transistor Silicon NPN ?PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Electrical Characteristics (Ta 25°C) (Q1)Characteristics Symbol Test Condition Min Typ. MaxUn ..
RTQ020N03 , 2.5V Drive Nch MOS FET
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RTQ030P02TR , DC-DC Converter (-20V, -3.0A)
RTQ035N03 , 2.5V Drive Nch MOS FET
RTQ035P02 TR , DC-DC Converter (−20V, −3.5A)
RN4610
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.
TOSHIBA
RN4610
TOSHIBA TRANSISTOR
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
RN4ti'il0
SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT
AND DRIVER CIRCUIT APPLICATIONS.
q Including Two Devices in SM6 (Super Mini Type with 6 leads)
. With Built-in Bias Resistors
q Simplify Circuit Design
q Reduce a Quantity of Parts and Manufacturing Process
EQUIVALENT CIRCUIT
Unit in mm
0.95¢ 0.95
0.30- 008
EMITTER 1
BASE 1
COLLECTOR 2
EMITTER 2
BASE 2
SM6 COLLECTOR 1
9‘9“!“933‘7’3"
JEDEC -
EIAJ -
TOSHIBA 2-3N1A
Q1 C Q2 C
RI R1 RI : 4.7 kn
B B (Q1, Q2 COMMON)
QI MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO - 50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC - 100 mA
Q2 MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Q1, Q2 COMMON MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 300 mW
J unction Temperature Tj 150 T
Storage Temperature Range Tstg - 55--150 t
* : Total Rating
Weight : 0.015g
MARKING
EQUIVALENT CIRCUIT
(TOP VIEW)
'iyi=1
961001EAA2
TOSHIBA Semiconductor Reliability Handbook.
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations m which a malfunction or failure of a TOgHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
of the buyer, when utilizing
1997-05-13 1/4
TOSHIBA RN4610
Q1 ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = - 50V, IE = 0 - - - 100 nA
Emitter Cut-off Current IEBO VEB = - 5V, 1C = 0 - - - 100 nA
LC Current Gain hFE VCE = -5V, IC = - lmA 120 - 400
Collector-Emitter Saturation - -
Voltage VCE (sat) IC-- -5mA, IB-- -0.25mA - -0.1 -0.3 V
Transition Frequency fT VCE = - 10V, IC = -5rnA - 200 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 3 6 pF
Q2 ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cufroff Current ICBO VCB = 50V, IE = 0 - - 100 nA
Emitter Cut-off Current IEBO VEB = 5V, 1C = O - - 100 nA
DC Current Gain hFE VCE = 5V, IC = 1mA 120 - 700
Collector-Emitter Saturation - -
Vol tage VCE (sat) 1C - 5mA, IB - 0.25mA - 0.1 0.3 V
Transition Frequency fT VCE = 10V, IC = 5mA - 250 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 3 6 pF
Q1, Q2 COMMON ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Resistor R1 - 3.29 4.7 6.11 kn
96100IEAA2'
O The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third cgames which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1997-05-13 2/4
TOSHIBA
RN4610
1C - VI(0N)
li -30
3 T --1000C
n: -5 a"
8 COMMON EMITTER
-0.5 VCE = -0.2V
-0.1 -0.3 -1 -3 -10 -30 -100
INPUT VOLTAGE V1 (0N) (V)
IC - VI (OFF)
- 1000
= tt 25
-300 Ta 100%
COMMON EMITTER
VCE = - 5V
COLLECTOR CURRENT 10 (#A)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
INPUT VOLTAGE V1 (OFF) (V)
hFE - IC
COMMON EMITTER
1000 VCE-- _5v
500 Ta = 100°C
DC CURRENT GAIN hFE
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 20
VCE (sat) (V)
Ta = 100°C
COLLECTOR- EMIT'I‘ER SATURATION
V0 LTAG E
-th1 -th3 -1 -3 -10 -30 -100
COLLECTOR CURRENT 1C (mA)
1997-05-13 3/4
TOSHIBA RN4610
IC - V1(0N) hFE - IC
50 COMMON EMITTER
A 1000 D VCE=5V
f 30 Ta=100 c
S? g 500
E g 300
E 6 Ta=100°0 Es
i? 3 ',f,e 100
[d 0 50
‘3 1 D 30
8 COMMON EMITTER
. VCE=0.2V
0.3 10
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
INPUT VOLTAGE V1 (0N) (V) COLLECTOR CURRENT IC (mA)
3000 IC - VI (OFF) VCE (sat) - IC
E COMMON EMITTER
H I /1 =20
A 1 c B
i 1000 ir,
V ti Lt 0.5
J? m Co"
500 M g 0.3
'e"; :5
tl 300 Ta-- 100°C 25 E g
D . 0.1
o g Ta = 100''C
o GN 0.05
t 100 a Si!
a: 4 S 0 03
ti COMMON EMITTER g o . 25
8 50 VCE = 5V - 25
30 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.3 1 3 10 30 100
INPUT VOLTAGE VI (OFF) (V) COLLECTOR CURRENT IC (mA)
1997-05-13 4/4
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