RN2963FS ,Bias resistor built-in transistor (BRT), 2-in-1Applications 1.0±0.05 0.8±0.05 0.1±0.050.1±0.05 • Two devices are incorporated into a fine pitch S ..
RN2964FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. In ..
RN2964FS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) (top view) Characteristics Symbol Rating Unit ..
RN2968 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type with 6 leads) With built-in ..
RN2968FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. In ..
RN2970FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN2970FE,RN2971FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built ..
RTM002P02 , 2.5V Drive Pch MOS FET
RTM002P02 T2L , 2.5V Drive Pch MOS FET
RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RN2963FS-RN2964FS
Bias resistor built-in transistor (BRT), 2-in-1
RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)
package. Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Complementary to RN1961FS~RN1966FS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.001 g (typ.) 54
1 2 3
R1
R2
Equivalent Circuit (top view)
