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RN2112MFV-RN2113MFV
Bias resistor built-in transistor (BRT)
RN2112MFV ,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN21 12MFV , RN2113MFV Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1112MFV and RN1113MFV
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Weight: 1.5 mg (typ.)
Unit: mm
0.45
