RN2107ACT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V ..
RN2107F ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsRN2107FRN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN21 ..
RN2107FT ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. High-density mount is possible because of devices housed in very thin TESM pack ..
RN2107MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight: 0.0015 g (typ.) Characteristic Symbol Rating Unit Coll ..
RN2108 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2109 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsRN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 S ..
RTL8201 , REALTEK SINGLE CHIP SINGLE PORT 10/100M FAST ETHERNET PHYCEIVER RTL8201BL
RTL8201CP-VD , SINGLE-CHIP/SINGLE-PORT 10/100M FAST ETHERNET PHYCEIVER (With Auto Crossover)
RTM002P02 , 2.5V Drive Pch MOS FET
RTM002P02 T2L , 2.5V Drive Pch MOS FET
RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RN2107ACT
Bias resistor built-in transistor (BRT)
RN2107ACT~RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107ACT, RN2108ACT, RN2109ACT Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Extra small package (CST3) is applicable for extra high density
fabrication. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Complementary to RN1107ACT to RN1109ACT
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) * : Mounted on FR4 board (10 mm × 10 mm × 1 mm)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
Unit: mm
Weight: 0.75 mg (typ.)
R1
R2
