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RN1961FETOSHIBAN/a160000avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1962FETOSHIBAN/a59500avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1963FETOSHIBAN/a27000avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1964FETOSHIBAN/a196000avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1966FETOSHIBAN/a453000avaiTransistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.


RN1966FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1966FS ,Bias resistor built-in transistor (BRT), 2-in-1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1967 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias ..
RN1968CT , Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
RN1968FS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristic ..
RN1970FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit andDriver Circuit Applications.Applications.  Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.  Inc ..
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RN1961FE-RN1962FE-RN1963FE-RN1964FE-RN1966FE
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE

Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package. Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Complementary to RN2961FE~RN2966FE
Equivalent Circuit and Bias Resistor Values

Maximum Ratings (Ta �
�� � 25°C) (Q1, Q2 common)
Note: Total rating
Unit: mm
Weight: g (typ.)
Equivalent Circuit
(top view)
6 5 4
1 2 3
R1
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