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RN1910AFSTOSHIBAN/a8700avaiBias resistor built-in transistor (BRT), 2-in-1
RN1911AFSTOSHIBAN/a1020000avaiBias resistor built-in transistor (BRT), 2-in-1


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RN1910AFS-RN1911AFS
Bias resistor built-in transistor (BRT), 2-in-1
RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1910AFS, RN1911AFS

Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications • Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package. Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs. Complementary to the RN2910AFS/RN2911AFS
Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Unit: mm
Weight: 0.001 g (typ.) 5 4
12 3
R1
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