RN1111 ,BUSSED RESISTOR NETWORKRN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mmS ..
RN1111CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight:0.75 mg (typ.) Characteristics Symbol Rating Unit Colle ..
RN1111F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switch ..
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RN1111MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1112 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
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RN1110-RN1111
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1110,RN1111
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1110,RN1111 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) Weight: 2.4mg
Unit: mm
