| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| RN1107FV |
TOSHIBA|TOSHIBA |
N/a |
23900 |
 |
|
RN1107MFV ,Bias resistor built-in transistor (BRT)Applications z Ultra-small package, suited to very high density mounting 11 z Incorporating a bia ..
RN1108 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of par ..
RN1108CT ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1108MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage V 50 ..
RN1109 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit ..
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