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RMPA5251
4.90-5.85 GHz HBT Linear Power Amp
RMPA5251 October 2004 RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier • 2.5% EVM at 18.0dBm modulated power out General Description • 3.3V single positive supply operation The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 • Adjustable bias current operation to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 • Two power saving shutdown options (bias and logic x 0.9 mm package with internal matching on both input and control) output to 50Ω minimizes next level PCB space and allows • Integrated power detector with >18dB dynamic range for simplified integration. The on-chip detector provides power sensing capability while the logic control provides • Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless power saving shutdown options. The PA’s low power package consumption and excellent linearity are achieved using our • Internally matched to 50Ω InGaP Heterojunction Bipolar Transistor (HBT) technology. Device • Minimal external components Features • Optimized for use in IEEE 802.11a WLAN applications • 4.9 to 5.85 GHz Operation • 27dB small signal gain • 26dBm output power @ 1dB compression 1,3 Electrical Characteristics 802.11a OFDM Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Minimum Typical Maximum Minimum Typical Maximum Unit 10 Frequency 4.90 5.355.15 5.85 GHz Supply Voltage 3.0 3.3 3.6 3.0 3.3 3.6 V Gain 27 28 dB Total Current @ 18dBm P 250 240 mA OUT Total Current @ 19dBm P 260 250 mA OUT 2 EVM @ 18dBm P 2.5 2.5 % OUT 2 EVM @ 19dBm P 3.5 3.5 % OUT Detector Output @ 19dBm P 450 500 mV OUT 4 Detector Threshold 5.0 5.0 dBm 5, 6 P Spectral Mask Compliance 21.0 20.0 dBm OUT 1 Electrical Characteristics Single Tone Parameter Minimum Typical Maximum Minimum Typical Maximum Unit 10 Frequency 4.90 5.355.15 5.85 GHz Supply Voltage 3.0 3.3 3.6 3.0 3.3 3.6 V 7 Gain 27 27.5 dB 7, 11 Total Quiescent Current 140–220 140–220 mA Notes: 1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Not measured 100% in production. 4. P measured at P corresponding to power detection threshold. OUT IN 5. Measured at P at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. IN 6. P is adjusted to point where performance approaches spectral mask requirements. IN 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. ©2004 RMPA5251 Rev. D
