RMPA2265 ,28dBm WCDMA Power Amplifier ModuleElectrical Characteristics (1920 to 1980 MHz) Symbol Parameter Min Typ Max Units Commentsf Operatin ..
RMPA2450 ,ISM Band PA (Fully Matched)Block Diagram (RMPA2450)TOP VIEWPin# Description1 GND0.200 SQ.2 RF OutBOTTOM VIEW3 GND6 5 4 45 6 4 ..
RMPA2450 ,ISM Band PA (Fully Matched)applications. On-chip matching components• Small Package Outline: 0.28" x 0.28" x 0.07"allow operat ..
RMPA2450 ,ISM Band PA (Fully Matched)applications in the 2.4 to 2.5GHz ISM frequency band. The • 28dBm Output Power (P1dB) at Vd = +5Va ..
RMPA2450 ,ISM Band PA (Fully Matched)Electrical Characteristics (Note 4, At 25°C, Z = 50Ω , Unless Otherwise Noted) OParameter Min Typ M ..
RMPA2451 ,ISM Band PA (Partially Matched)Electrical CharacteristicsParameter Min Typ Max UnitsFrequency Range 2400 2500 MHz1Gain 28.5 33 dB1 ..
RTD14024 , Miniature Printed Circuit Board Relays, Sockets and Accessories
RTD2513 , Flat Panel Display Controller
RTD34024 , Miniature Printed Circuit Board Relays, Sockets and Accessories
RTE002P02 , 2.5V Drive Pch MOS FET
RTE24012 , Miniature Printed Circuit Board Relays, Sockets and Accessories
RTE24012F , Power PCB Relay RT2
RMPA2265
28dBm WCDMA Power Amplifier Module
RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz February 2005 RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features General Description ■ Single positive-supply operation and low power and shut- The RMPA2265 power amplifier module (PAM) is designed for down modes WCDMA applications in both the 1850–1910 and 1920–1980 MHz bands. The 2 stage PAM is internally matched to 50Ω to ■ 42% WCDMA efficiency at +28 dBm average output power minimize the use of external components and features a low- 1920–1980 MHz power mode to reduce standby current and DC power con- ■ 39% WCDMA efficiency at 27.5 dBm average output power sumption during peak phone usage. High power-added effi- 1850–1910 MHz ciency and excellent linearity are achieved using Fairchild’s ■ Meets UMTS/WCDMA performance requirements in both InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. UMTS bands ■ Compact Lead-free compliant LCC package– (3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50Ω and DC blocked RF input/output Device Functional Block Diagram (Top View) MMIC Vcc118 Vcc2 Input Output RF IN 7 2 RF OUT Match Match Vmode 3 6 GND DC Bias Control GND 4 5 Vref (paddle ground on package bottom) ©2005 1 RMPA2265 Rev. G
