RMPA2263 ,UMTS 1920-1980 MHz Power Amplifier Moduleapplications. Answering the call forPoutultra-low DC power consumption and extended battery life in ..
RMPA2265 ,28dBm WCDMA Power Amplifier ModuleElectrical Characteristics (1920 to 1980 MHz) Symbol Parameter Min Typ Max Units Commentsf Operatin ..
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RMPA2263
UMTS 1920-1980 MHz Power Amplifier Module
RMPA2263 i-Lo™ WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) February 2005 Preliminary RMPA2263 i-Lo™ WCDMA Power Amplifier Module 1920–1980 MHz Features General Description ■ 40% WCDMA efficiency at +28 dBm Pout The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules ■ 14% WCDMA efficiency (85 mA total current) at +16 dBm targeting UMTS/WCDMA applications. Answering the call for Pout ultra-low DC power consumption and extended battery life in ■ Linear operation in low-power mode up to +19 dBm portable electronics, the RMPA2263 uses novel proprietary ■ Low quiescent current (Iccq): 20 mA in low-power mode circuitry to dramatically reduce amplifier current at low to ■ Meets UMTS/WCDMA performance requirements medium RF output power levels (< +16 dBm), where the ■ Single positive-supply operation with low power and shut- handset most often operates. A simple two-state Vmode control down modes is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by – 3.4V typical Vcc operation as much as 70% compared to traditional power-saving –Low Vref (2.85V) compatible with advanced handset methods. No additional circuitry, such as DC-to-DC converters, chipsets are required to achieve this remarkable improvement in ■ Compact Lead-free compliant LCC package – amplifier efficiency. Further, the 4 x 4 x 1.5 mm LCC package is (4.0 x 4.0 x 1.5 mm nominal) pin-compatible and a drop-in replacement for last generation 4 x ■ Industry standard pinout 4 mm PAMs widely used today, minimizing the design time to ■ Internally matched to 50 Ohms and DC blocked RF input/ apply this performance-enhancing technology. The multi-stage output GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vcc1 1 10 Vcc2 INPUT RF IN 2 GND 9 MATCH OUTPUT 3 GND 8 RF OUT MATCH Vmode 4 7 GND BIAS/MODE SWITCH Vref 5 6 GND 11 (paddle ground on package bottom) ©2004 1 RMPA2263 i-LO™ Rev. C
