RMPA0965 ,CDMA and CDMA2000-1X Power Amplifier ModuleBlock Diagram(Top View)MMICVcc1 Vcc21 8INPUTOUTPUTRF IN 2 7 RF OUTMATCHMATCHVmode3 6GNDDC BIAS CONT ..
RMPA0965 ,CDMA and CDMA2000-1X Power Amplifier Modulefeatures a low-powerpower mode to reduce standby current and DC power con-■ 52% AMPS mode efficiency ..
RMPA0967 ,CDMA and CDMA2000-1X Power Amplifier Modulefeatures a low-powerpower mode to reduce standby current and DC power con-■ 52% AMPS mode efficiency ..
RMPA0967 ,CDMA and CDMA2000-1X Power Amplifier ModuleBlock Diagram(Top View)MMIC1 8 GNDVrefDC Bias ControlOutputVmode 2 7 RF OUTMatchInputRF IN 3 6GNDMa ..
RMPA1759 ,3.4V Korean PCS CDMA PA ModuleBlock DiagramGNDPA MODULEVCC1, VCC2COLLECTOR(3,6, 7,9,11)(1, 10) BIASINTERSTAGEMATCHINPUT OUTPUTINP ..
RMPA1759 ,3.4V Korean PCS CDMA PA Modulefeatures a low-power mode toreduce standby current and DC power consumption during standard pinoutp ..
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RTC-8564NB , I2C-Bus INTERFACE REAL TIME CLOCK MODULE
RMPA0965
CDMA and CDMA2000-1X Power Amplifier Module
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module February 2005 RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Features General Description ■ Single positive-supply operation with low power and The RMPA0965 power amplifier module (PAM) is designed for shutdown modes cellular band AMPS, CDMA, CDMA2000-1X and WCDMA applications. The 2 stage PAM is internally matched to 50Ω to ■ 40% CDMA/WCDMA efficiency at +28 dBm average output minimize the use of external components and features a low- power power mode to reduce standby current and DC power con- ■ 52% AMPS mode efficiency at +31 dBm output power sumption during peak phone usage. High power-added effi- ■ Compact lead-free compliant LCC package ciency and excellent linearity are achieved using our InGaP (3.0 x 3.0 x 1.0 mm) Heterojunction Bipolar Transistor (HBT) process. ■ Internally matched to 50Ω and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance require- ments Device Functional Block Diagram (Top View) MMIC Vcc1 Vcc2 1 8 INPUT OUTPUT RF IN 2 7 RF OUT MATCH MATCH Vmode 3 6 GND DC BIAS CONTROL GND Vref 4 5 (paddle ground on package bottom) 1 ©2005 RMPA0965 Rev. E
