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RJK0602DPN-E0 from NEC

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RJK0602DPN-E0

Manufacturer: NEC

N-Channel MOS FET 60 V, 100 A, 3.9 m.

Partnumber Manufacturer Quantity Availability
RJK0602DPN-E0,RJK0602DPNE0 NEC 30000 In Stock

Description and Introduction

N-Channel MOS FET 60 V, 100 A, 3.9 m. **Enhance Power Efficiency with the RJK0602DPN-E0 MOSFET**  

In today’s fast-evolving electronics landscape, high-performance power management is essential for optimizing efficiency and reliability. The **RJK0602DPN-E0** MOSFET stands out as a superior solution for applications demanding low on-resistance, high-speed switching, and robust thermal performance.  

Designed with cutting-edge technology, the RJK0602DPN-E0 features an ultra-low **RDS(ON)** of just 6.0mΩ (max) at VGS=10V, minimizing conduction losses and improving energy efficiency. Its compact **PowerPAK® SO-8FL** package ensures excellent thermal dissipation, making it ideal for space-constrained designs where heat management is critical.  

With a **30V drain-source voltage (VDS)** rating and a continuous drain current (**ID**) of 60A, this MOSFET excels in power supply modules, DC-DC converters, motor drivers, and battery management systems. Its fast switching capabilities reduce switching losses, enhancing overall system performance in high-frequency applications.  

Engineers will appreciate its **lead-free and RoHS-compliant** construction, aligning with global environmental standards. The RJK0602DPN-E0 also offers superior avalanche energy tolerance, ensuring durability in demanding conditions.  

For designers seeking a reliable, high-efficiency MOSFET that balances performance with thermal stability, the **RJK0602DPN-E0** is a compelling choice. Its combination of low resistance, high current handling, and compact form factor makes it a versatile component for next-generation power electronics.  

Upgrade your power designs with the RJK0602DPN-E0 and experience enhanced efficiency, reduced losses, and long-term reliability in your applications.

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