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RGF1BFSCN/a5000avaiFast Rectifiers


RGF1B ,Fast RectifiersFeatures• Glass passivated junction.• For surface mounted application.• Low forward voltage drop.• ..
RGF1D ,Fast RectifiersThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
RGF1D ,Fast Rectifiers08-Feb-02 1Patented*RGF1A thru RGF1MVishay Semiconductorsformerly General SemiconductorRatings and ..
RGF1K ,Fast RectifiersRGF1A thru RGF1MVishay Semiconductorsformerly General SemiconductorSurface Mount Glass Passivated J ..
RGF1M ,Surface Mount Glass Passivated Junction Fast Switching Rectifier Forward Current 1.0AElectrical Characteristics (TJ = 25°C unless otherwise noted)Parameter Symbol RGF1A RGF1B RGF1D RGF ..
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RGF1B
Fast Rectifiers
RGF1A-RGF1M RGF1A - RGF1M Features • Glass passivated junction. • For surface mounted application. • Low forward voltage drop. • High current capability. • Easy pick and place. SMA/DO-214AC • High surge current capability. COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units 1A 1B 1D 1G 1J 1K 1M V Maximum Repetitive Reverse Voltage RRM 50 100 200 400 600 800 1000 V I Average Rectified Forward Current, 1.0 A F(AV) @ T = 125°C L I Non-repetitive Peak Forward Surge FSM Current 30 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 T °C stg T Operating Junction Temperature -65 to +175 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 1.76 W D Thermal Resistance, Junction to Ambient* 85 R °C/W θJA Thermal Resistance, Junction to Lead* 28 R °C/W JL θ *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units 1A 1B 1D 1G 1J 1K 1M V Forward Voltage @ 1.0 A F 1.3 V t Reverse Recovery Time rr 150 250 500 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R rr I Reverse Current @ rated V R R 5.0 μA T = 25 C ° A 100 μA T = 125°C A C Total Capacitance T 8.5 pF V = 4.0 V, f = 1.0 MHz R 2001 RGF1A-RGF1M, Rev. G
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