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RFP4N100FSCN/a1360avai4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs


RFP4N100 ,4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETsFeaturesN-Channel Power MOSFETs• 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel r = 3.500ΩDS ..
RFP50N05 ,50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETsFeaturesMOSFETs• 50A, 50VThese are N-Channel power MOSFET’S manufactured = 0.022Ω•rDS(ON)using the ..
RFP50N06 ,50A, 60V, 0.022 Ohm, N-Channel Power MOSFETsRFG50N06, RFP50N06, RF1S50N06SMData Sheet July 1999 File Number 3575.450A, 60V, 0.022 Ohm, N-Channe ..
RFP6P08 ,6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETsFeaturesP-Channel Power MOSFETs• -6A, -80V and -100VThese are P-Channel enhancement mode silicon ga ..
RFP6P10 ,6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETsRFP6P08, RFP6P10Data Sheet October 1999 File Number 1490.2-6A, -80V and -100V, 0.600 Ohm,
RFP70N03 ,70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETsRFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power
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RFP4N100
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
RFP4N100, RF1S4N100SM
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Features
4.3A, 1000V DS(ON) = 3.500Ω UIS Rating Curve (Single Pulse)
-55o C to 150o C Operating Temperature Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering Information

NOTE: When ordering, use the entire part number.
DRAIN
(FLANGE)GATE
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