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RF1S70N03HARRIS/哈N/a500avai70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs


RF1S70N03 ,70A, 30V, 0.010 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 70A, 30VThese N-Channel power MOSFETs are manufactured using = 0.010Ω•rDS(ON)the ..
RF1S70N03SM ,70A, 30V, 0.010 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 70A, 30VThese N-Channel power MOSFETs are manufactured using = 0.010Ω•rDS(ON)the M ..
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RF1S70N03
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
RFP70N03, RF1S70N03, RF1S70N03SM
70A, 30V, 0.010 Ohm, N-Channel Power
MOSFETs

These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Features
70A, 30V
DS(ON)
= 0.010 Temperature Compensating PSPICE
Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) 175
C Operating Temperature Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
JEDEC TO-262AA
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
DRAIN
(FLANGE)
SOURCE
GATE
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