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RF1S640INTERSILN/a100avai18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs


RF1S640 ,18A, 200V, 0.180 Ohm, N-Channel Power MOSFETsapplications such as switching regulators, switching convertors, motor drivers, relay drivers, and ..
RF1S640SM9A ,18A, 200V, 0.180Ohm, N-Channel Power MOSFETsapplications such as switching regulators, switching convertors, motor drivers, relay drivers, and ..
RF1S70N03 ,70A, 30V, 0.010 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 70A, 30VThese N-Channel power MOSFETs are manufactured using = 0.010Ω•rDS(ON)the ..
RF1S70N03SM ,70A, 30V, 0.010 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 70A, 30VThese N-Channel power MOSFETs are manufactured using = 0.010Ω•rDS(ON)the M ..
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RF1S640
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
IRF640, RF1S640, RF1S640SM
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Features
18A, 200V DS(ON) = 0.180Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speed Linear Transfer Characteristics High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
JEDEC TO-262AA
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A. DRAIN
(FLANGE)GATE
SOURCE
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