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REF1004C-1.2-REF1004I-1.2/2K5 Fast Delivery,Good Price
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REF1004C-1.2 |REF1004C12BBN/a21534avai1.2
REF1004I-1.2/2K5 |REF1004I122K5TIN/a21avai1.2


REF1004C-1.2 ,1.2REF10041.2V and 2.5V MicropowerVOLTAGE REFERENCE
REF1004C-2.5 ,1.2REF10041.2V and 2.5V MicropowerVOLTAGE REFERENCE
REF1004C-2.5/2K5 ,1.2REF10041.2V and 2.5V MicropowerVOLTAGE REFERENCE
REF1004C-2.5/2K5 ,1.2FEATURESDESCRIPTIONl INITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminalREF1004-1.2 ..
REF1004C-2.5E4 ,Micropower Voltage Reference 8-SOIC 0 to 70REF10041.2V and 2.5V MicropowerVOLTAGE REFERENCE
REF1004I-1.2/2K5 ,1.2FEATURESDESCRIPTIONl INITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminalREF1004-1.2 ..
RN1107CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V 20 ..
RN1107F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of par ..
RN1107FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications.  High-density mount is possible because of devices housed in very thin TESM pac ..
RN1107MFV ,Bias resistor built-in transistor (BRT)Applications z Ultra-small package, suited to very high density mounting 11 z Incorporating a bia ..
RN1108 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of par ..
RN1108CT ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..


REF1004C-1.2-REF1004I-1.2/2K5
1.2
REF1004 1.2V and 2.5V Micropower VOLTAGE REFERENCE FEATURES DESCRIPTION lINITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminal REF1004-1.2 ±4mV bandgap reference diodes designed for high accuracy REF1004-2.5 ±20mV with outstanding temperature characteristics at low operating currents. Prior to the introduction of thelMINIMUM OPERATING CURRENT: REF1004 Micropower Voltage References, accuracy REF1004-1.2 10μA and stability specifications could only be attained by REF1004-2.5 20μA expensive screening of standard devices. The REF1004 lEXCELLENT LONG TERM is a cost effective solution when reference voltage TEMPERATURE STABILITY accuracy, low power, and long term temperature sta- lVERY LOW DYNAMIC IMPEDANCE bility are required. lOPERATES UP TO 20mA REF1004 is a drop-in replacement for the LT1004 as lPACKAGE: 8-Lead SOIC well as an upgraded replacement of the LM185/385 series references. The REF1004C is characterized for operation from 0°C to 70°C and the REF1004I is APPLICATIONS characterized for operation from –40°C to +85°C. lBATTERY POWERED TEST EQUIPMENT The REF1004 is offered in an 8-lead Plastic SOIC lPORTABLE MEDICAL INSTRUMENTATION package and shipped in anti-static rails or tape and reel.lPORTABLE COMMUNICATIONS DEVICES lA/D AND D/A CONVERTERS lNOTEBOOK AND PALMTOP COMPUTERS Typical Operating Circuit NC 1 8 Cathode 2 7 NC NC NC 3 6 Cathode Anode 4 5 NC (Top View) International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © 1992 Burr-Brown Corporation PDS-1172 Printed in U.S.A. October, 1993 SBVS002
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