| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| RA13H1317M-101 |
MITSUBISHI |
N/a |
39 |
 |
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
RA13H137M-101 MITSUBISHI
RA13H3340M MIT, RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA13H4047M-101 MITSUBISHI, RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA13V1 SamKen
RA144PQFD
RA151JT KYOCERA
RA152T SYSART
RA153A RAIO
RA153T RAIO
RA1847 ASAHI
RA18W-K TAKAMISAWA
RA1A
RA1A-12V NAIS
RA-2 POLAND
RA-2 POLAND
RA20-10RO FULLPOWER
RA20-10RO FULLPOWE
RA2020-N9-T1
RA2020-N9-T1 SUSUMU
RA2-16V472MJ7 ELNA
RA2204 RAY
RA220T
RA22136 SEC
RA224 KWRCA
RA24 BEYSCHLA
RA24W-K TAKAMISAWA
RA2512 N/A
RA286 LGS
RA2891F
RA294 RUWIDO
RA2CQ472J
RA2G-5K
RA3.3-4
RA3011AA
RA3021AA
RA3021AA SHARP
RA3021AA ZEBRA
RA30231050 ELEC-TROL
RA30231051 ELEC-TROL INC MEXICO
RA30H0608M MITSUBISHI, RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
RA30H2127M MIT, RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H2127M MITSUBISHI, RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA31201051 ELEC
RA3245 RAYTHEON
RA3245 RAYTHEON
RA349 HYUNDAI
RA3678 FSC
RA3678C Raytheon
RA3905 F
RA3906 FSC
RA3906 NS
RA3906 FAIRCHIL
RA3906 FAIRCHILD
RA3906 C1 FAI
RA3906C1 FAIRCHILD
RA3906C1 FSC
RA3906C1REVD FSC
RA3906C1-REVD FAI
RA3906REVD FAI
RA3906T-NL FAIRCHIL
RA3W-K TAKAMISAWA
RA-3W-K/RA3W-K TAKAMISAWA
RA4 (DAN202C) ROHM
RA4*
RA13H1317M-101 , RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA4-12W-K , MINIATURE RELAY 4 POLES-1 to 2 A (FOR SIGNAL SWITCHING)
RA45H4452M , RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA4L-D12W-K , MINIATURE RELAY 4 POLES-1 to 2 A (FOR SIGNAL SWITCHING)
RA4L-D12W-K , MINIATURE RELAY 4 POLES-1 to 2 A (FOR SIGNAL SWITCHING)
RFM8P10 , -8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
RFN20T2D , Super Fast Recovery Diode
RFP10N15 ,10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETsFeaturesMOSFETs• 10A, 150VThese are N-channel enhancement-mode silicon-gate= 0.300Ω•rDS(ON)power fie ..
