| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| R1RW0416DSB-2LR |
MIT |
N/a |
36 |
 |
4M High Speed SRAM (256-kword x 16-bit) |
R1RW0416DSB-2PI#SO RENESAS
R1RW0416DSB-2PR RENESAS, 4M High Speed SRAM (256-kword x 16-bit)
R1RW0416DSB-2PR RENESAS , 4M High Speed SRAM (256-kword x 16-bit)
R1RW0416DSB-2PR#B0 RENESAS
R1SG
R1SG N/A
R1U01G972120AD WIT
R1VF348APZ-T TI
R1VF348PZ-T TEXAS
R1VF34A2PZQ
R1W065 BOURNS
R1RW0416DSB-2LR , 4M High Speed SRAM (256-kword x 16-bit)
R1WV3216RBG-7SI , 32Mb Advanced LPSRAM (2M wordx16bit)
R1WV3216RBG-7SR , 32Mb Advanced LPSRAM (2M wordx16bit)
R2000F , HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)
R2020 , FAST ETHERNET RISC PROCESSOR
RD4.7M-T1B ,Constant Voltage diode 200mW 3pin SC-59FEATURES+0.10.65–0.151.5• Planar process• VZ; Applied E24 standard.2
RD4.7M-T2B ,Constant Voltage diode 200mW 3pin SC-59APPLICATIONS–Circuits for,31Constant Voltage, Constant Current,Waveform clipper, Surge absorber, et ..
RD4.7M-T2B ,Constant Voltage diode 200mW 3pin SC-59APPLICATIONS–Circuits for,31Constant Voltage, Constant Current,Waveform clipper, Surge absorber, et ..
