QEB373 ,SUBMINIATURE PLASTIC INFRARED EMITTING DIODEFEATURES0.074 (1.9)• T-3/4 (2mm) Surface Mount Package.059 (1.5)• Tape & Reel Option (See Tape & Re ..
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QEB373
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.019 (0.5) 0.016 (0.4) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package .059 (1.5) • Tape & Reel Option (See Tape & Reel Specifications) .118 (3.0) .051 (1.3) .102 (2.6) • Lead Form Options: Gullwing, Yoke, Z-Bend 0.055 (1.4) • Narrow Emission Angle, 24° 0.008 (0.21) 0.004 (0.11) • Wavelength = 880nm, AlGaAs 0.024 (0.6) SCHEMATIC 0.106 (2.7) 0.091 (2.3) • Clear Lens • Matched Photosensor: QSB363 ANODE NOTES: • High Radiant Intensity 1. Dimensions are in inches (mm). CATHODE 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. NOTES (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A 1. Derate power dissipation linearly Parameter Symbol Rating Units 1.33 mW/°C above 25°C. °C Operating Temperature T -40 to +100 OPR 2. RMA flux is recommended. °C Storage Temperature T -40 to +100 STG 3. Methanol or isopropyl alcohols (2,3,4) °C are recommended as cleaning Soldering Temperature (Iron) T 240 for 5 sec SOL-I agents. (2,3) °C Soldering Temperature (Flow) T 260 for 10 sec SOL-F 4. Soldering iron tip at 1/16” (1.6mm) Continuous Forward Current I 50 mA F from housing Reverse Voltage V 5V R (1) Power Dissipation P 100 mW D (TA =25°C) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS Peak Emission Wavelength I = 100mA l — 880 — nm F P Emission Angle I = 100mA U — ±12 — Deg. F Forward Voltage I = 100mA, t = 20ms V — — 1.7 V F P F Reverse Current V = 5V I — — 100 μA R R Radiant Intensity I = 100mA, t = 20ms Ie 16 — — mW/sr F P Rise Time I = 100mA, t — 800 — ns F r Fall Time t = 20ms t — 800 — ns P f 1 of 4 100008A
