QEB363 ,SUBMINIATURE PLASTIC INFRARED EMITTING DIODEFEATURES0.074 (1.9) T-3/4 (2mm) Surface Mount Package Tape & Reel Option (See Tape & Reel Specifi ..
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QEB363
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.019 (0.5) 0.016 (0.4) 0.012 (0.3) FEATURES 0.074 (1.9) T-3/4 (2mm) Surface Mount Package Tape & Reel Option (See Tape & Reel Specifications) .059 (1.5) .118 (3.0) .051 (1.3) Lead Form Options: Gullwing, Yoke, Z-Bend .102 (2.6) 0.055 (1.4) Narrow Emission Angle, 24° 0.008 (0.21) Wavelength = 940 nm, GaAs SCHEMATIC 0.004 (0.11) 0.024 (0.6) 0.106 (2.7) Pink Tinted Lens 0.091 (2.3) Matched Photosensor: QSB363 ANODE NOTES: High Radiant Intensity 1. Dimensions are in inches (mm). CATHODE 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. NOTES (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A 1. Derate power dissipation linearly Parameter Symbol Rating Units 1.33 mW/°C above 25°C. °C Operating Temperature T -40 to +100 OPR 2. RMA flux is recommended. °C Storage Temperature T -40 to +100 STG 3. Methanol or isopropyl alcohols (2,3,4) °C are recommended as cleaning Soldering Temperature (Iron) T 240 for 5 sec SOL-I agents. (2,3) °C Soldering Temperature (Flow) T 260 for 10 sec SOL-F 4. Soldering iron tip at 1/16” (1.6mm) Continuous Forward Current I 50 mA F from housing Reverse Voltage V 5V R (1) Power Dissipation P 100 mW D (TA =25°C) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS Peak Emission Wavelength I = 100 mA ! — 940 — nm F P Emission Angle I = 100 mA " — ±12 — Deg. F Forward Voltage I = 100 mA, t = 20 ms V — — 1.6 V F P F Reverse Current V = 5 V I — — 100µA R R Radiant Intensity I = 100 mA, t = 20 ms Ie 8 — — mW/sr F P Rise Time I = 100 mA, t —1 —µs F r Fall Time t = 20 ms t —1 —µs P f 1 of 4 100007C
