| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| PTZTE256.8B |
ROHM |
N/a |
18000 |
 |
Zener diode |
PTZTE2562B ROHM
PTZTE257.5A ROHM
PTZTE257.5A/1W-7.5V ROHM
PTZTE257.5B ROHM
PTZTE2575B ROHM
PTZTE258.2A ROHM
PTZTE258.2A(8.2V) ROHM
PTZTE258.2B ROHM
PTZTE259.1A ROHM
PTZTE259.1A 9.1V ROHM
PTZTE259.1B ROHM
PTZTFTE2551 ROHM
PTZTFTE2551 ROHS
PTZTFTE25511 ROHM
PU013V IR
PU105901C
PTZTE256.8B , Zener diode
PU1101 ,TransistorsApplications and Functions)I Power Transistor ArraysPU4000 SeriesPUSOOO Series PUA3000. N me .Serie ..
PU3117 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
PU3120 ,V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor arrayAbsolute Maximum Ratings (Tc=25°C) l E .' Emitterl B . BaseItem Symbol Value Umt I C : Collectorl l ..
PU3120 ,V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor arrayAbsolute Maximum Ratings (Tc=25°C) l E .' Emitterl B . BaseItem Symbol Value Umt I C : Collectorl l ..
R2600 , FAST ETHERNET RISC PROCESSOR
R2600 , FAST ETHERNET RISC PROCESSOR
R2880 , FAST ETHERNET RISC PROCESSOR
