| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| PTFB183404E |
INFINEON|Infineon |
N/a |
234 |
 |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz |
PTFB183404E V1 R250 INFINEON
PTFB183404EV1 INFINEON
PTFB183404F INFINEON, High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
PTFB191501E INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
PTFB192503FL INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
PTFB192557SH P2 INFINEON
PTFB193404E INFINEON
PTFB193404F INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
PTFB201602F/1-V2 INFINEON
PTFB211503FL INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
PTFB211512E INFINEON
PTFB211803EL P2 INFINEON
PTFB212503EL INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
PTFB212503EL V1 INFNEON
PTFB212503FL INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
PTFB213004F INFINEON, High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
PTFB213006E/2 INFINEON
PTFB260605EL INFINEON
PTFB262406E INFINEON
PTFB262406F INFINEON
PTFE2944 ST
PTFHV10140 INFINEON
PTFM04BB222Q2N34BO MURATA
PTFB183404E , High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
PTFM04BC222Q2N34B0 , POSISTOR for Circuit Protection
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